VS-C06ET07T-M3
ObsoleteVishay General Semiconductor - Diodes Division
DIODE SIL CARB 650V 6A TO220AC
VS-C06ET07T-M3
ObsoleteVishay General Semiconductor - Diodes Division
DIODE SIL CARB 650V 6A TO220AC
Description
General part information
VS-C06ET07T-M3
DIODE SIL CARB 650V 6A TO220AC
Technical Specifications
Parameters and characteristics for this part
| Specification | VS-C06ET07T-M3 |
|---|---|
| Capacitance | 250 pF |
| Current - Average Rectified (Io) | 6 A |
| Current - Reverse Leakage | 75 µA |
| Mounting Type | Through Hole |
| Operating Temperature - Junction (Max) | 175 °C |
| Operating Temperature - Junction (Min) | -55 °C |
| Package / Case | TO-220-2 |
| Package Name | TO-220AC |
| Speed - Fast Recovery (Maximum) | 500 ns |
| Speed - Fast Recovery (Minimum) | 200 mA |
| Technology | SiC (Silicon Carbide) Schottky |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Voltage - Forward (Vf) (Max) | 1.7 V, 1.7 V |
Pricing
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