SF64G R0G

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Taiwan Semiconductor Corporation

DIODE GEN PURP 200V 6A DO201AD

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Taiwan Semiconductor Corporation

DIODE GEN PURP 200V 6A DO201AD

Technical Specifications

Parameters and characteristics for this part

Specification	SF64G R0G

Capacitance @ Vr, F	100 pF
Current - Average Rectified (Io)	6 A
Current - Reverse Leakage @ Vr	5 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	DO-201AD, Axial
Reverse Recovery Time (trr)	35 ns
Speed	200 mA, 500 ns
Supplier Device Package	DO-201AD
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	200 V
Voltage - Forward (Vf) (Max) @ If	975 mV

Part	Technology	Voltage - DC Reverse (Vr) (Max) [Max]	Current - Average Rectified (Io)	Mounting Type	Speed	Package / Case	Voltage - Forward (Vf) (Max) @ If	Capacitance @ Vr, F	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Supplier Device Package
Taiwan Semiconductor Corporation SF64G R0G	Standard	200 V	6 A	Through Hole	200 mA 500 ns	DO-201AD Axial	975 mV	100 pF	150 °C	-55 °C	35 ns	5 µA	DO-201AD
Taiwan Semiconductor Corporation SF64G	Standard	200 V	6 A	Through Hole	200 mA 500 ns	DO-201AD Axial	975 mV	100 pF	150 °C	-55 °C	35 ns	5 µA	DO-201AD

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General part information

Diode 200 V 6A Through Hole DO-201AD

Technical documentation and resources