IRF8707TRPBF

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Infineon Technologies

STRONGIRFET™ N-CHANNEL POWER MOSFET ; SO-8 PACKAGE; 11.9 MOHM;

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Infineon Technologies

STRONGIRFET™ N-CHANNEL POWER MOSFET ; SO-8 PACKAGE; 11.9 MOHM;

Technical Specifications

Parameters and characteristics for this part

Specification	IRF8707TRPBF

Current - Continuous Drain (Id) @ 25°C	11 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	9.3 nC
Input Capacitance (Ciss) (Max) @ Vds	760 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Power Dissipation (Max)	2.5 W
Rds On (Max) @ Id, Vgs	11.9 mOhm
Supplier Device Package	8-SO
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.35 V

Part	Drain to Source Voltage (Vdss)	Supplier Device Package	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs	Technology	Vgs (Max)	FET Type	Package / Case	Package / Case [y]	Package / Case [x]	Power Dissipation (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C
Infineon Technologies IRF8707TRPBF	30 V	8-SO	11.9 mOhm	9.3 nC	MOSFET (Metal Oxide)	20 V	N-Channel	8-SOIC	3.9 mm	0.154 in	2.5 W	-55 °C	150 °C	Surface Mount	4.5 V 10 V	760 pF	2.35 V	11 A

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 30 V 11A (Ta) 2.5W (Ta) Surface Mount 8-SO

Technical documentation and resources