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NX2301PVL

NX2301PVL

NRND
Nexperia USA Inc.

MOSFETS 30 / 30 V, 350 / 200 MA N/P-CHANNEL TRENCH MOSFET

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NX2301PVL

NX2301PVL

NRND
Nexperia USA Inc.

MOSFETS 30 / 30 V, 350 / 200 MA N/P-CHANNEL TRENCH MOSFET

Find alt

Description

General part information

NX2301PVL

1.8 V RDSonrated for Low Voltage Gate Drive

AEC-Q101 qualified

Trench MOSFET technology

Technical Specifications

Parameters and characteristics for this part

SpecificationNX2301PVL
Current - Continuous Drain (Id) (Ta)2 A
Drain to Source Voltage (Vdss)20 V
Drive Voltage (Max Rds On)1.8 V
Drive Voltage (Min Rds On)4.5 V
FET TypeP-Channel
Gate Charge (Max)6 nC
GradeAutomotive
Input Capacitance (Ciss) (Max)380 pF
Mounting TypeSurface Mount
Operating Temperature150 °C
Package / CaseTO-236-3, SOT-23-3, SC-59
Package NameTO-236AB
Power Dissipation (Max)400 mW
QualificationAEC-Q101
Rds On (Max)120 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)8 V
Vgs(th) (Max)1.1 V

Pricing

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CAD

3D models and CAD resources for this part

    NX2301PVL | Nexperia USA Inc. | Zenode.ai