
GD10MPS12H
ObsoleteGeneSiC Semiconductor
DIODE SIL CARB 1200V 10A TO2472

GD10MPS12H
ObsoleteGeneSiC Semiconductor
DIODE SIL CARB 1200V 10A TO2472
Description
General part information
GD10MPS12H
DIODE SIL CARB 1200V 10A TO2472
Technical Specifications
Parameters and characteristics for this part
| Specification | GD10MPS12H |
|---|---|
| Current - Average Rectified (Io) | 10 A |
| Mounting Type | Through Hole |
| Operating Temperature - Junction | 175 °C |
| Package / Case | TO-247-2 |
| Package Name | TO-247-2 |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Voltage - DC Reverse (Vr) (Max) | 1200 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Sign in to see pricing
Create a free account to access distributor pricing data.
CAD
3D models and CAD resources for this part
Documents
Technical documentation and resources