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GD10MPS12H

GD10MPS12H

Obsolete
GeneSiC Semiconductor

DIODE SIL CARB 1200V 10A TO2472

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GD10MPS12H

GD10MPS12H

Obsolete
GeneSiC Semiconductor

DIODE SIL CARB 1200V 10A TO2472

Find alt

Description

General part information

GD10MPS12H

DIODE SIL CARB 1200V 10A TO2472

Technical Specifications

Parameters and characteristics for this part

SpecificationGD10MPS12H
Current - Average Rectified (Io)10 A
Mounting TypeThrough Hole
Operating Temperature - Junction175 °C
Package / CaseTO-247-2
Package NameTO-247-2
Reverse Recovery Time (trr)0 ns
TechnologySiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max)1200 V

Pricing

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CAD

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Documents

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