UF4007 TR

Obsolete

Central Semiconductor Corp

DIODE GEN PURP 1KV 1A DO41

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Obsolete

Central Semiconductor Corp

DIODE GEN PURP 1KV 1A DO41

Technical Specifications

Parameters and characteristics for this part

Specification	UF4007 TR

Capacitance @ Vr, F	10 pF
Current - Average Rectified (Io)	1 A
Current - Reverse Leakage @ Vr	10 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-65 C
Package / Case	DO-204AL, DO-41, Axial
Reverse Recovery Time (trr)	75 ns
Speed	200 mA, 500 ns
Supplier Device Package	DO-41
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	1000 V
Voltage - Forward (Vf) (Max) @ If	1.7 V

DIODE GEN PURP 1KV 1A DO41

Part	Technology	Supplier Device Package	Current - Reverse Leakage @ Vr	Voltage - DC Reverse (Vr) (Max) [Max]	Capacitance @ Vr, F	Package / Case	Current - Average Rectified (Io)	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Speed	Voltage - Forward (Vf) (Max) @ If	Reverse Recovery Time (trr)	Mounting Type
Central Semiconductor Corp UF4007 TR	Standard	DO-41	10 µA	1000 V	10 pF	Axial, DO-204AL, DO-41	1 A	150 °C	-65 C	200 mA, 500 ns	1.7 V	75 ns	Through Hole

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General part information

Diode 1000 V 1A Through Hole DO-41

Technical documentation and resources