Zenode.ai Logo
TW060N120C,S1F

TW060N120C,S1F

Active
Toshiba Semiconductor and Storage

TRANS MOSFET N-CH SIC 1.2KV 36A 3-PIN(3+TAB) TO-247

Find alt
TW060N120C,S1F

TW060N120C,S1F

Active
Toshiba Semiconductor and Storage

TRANS MOSFET N-CH SIC 1.2KV 36A 3-PIN(3+TAB) TO-247

Find alt

Description

General part information

TW060N120C,S1F

TRANS MOSFET N-CH SIC 1.2KV 36A 3-PIN(3+TAB) TO-247

Technical Specifications

Parameters and characteristics for this part

SpecificationTW060N120C,S1F
Current - Continuous Drain (Id) (Tc)36 A
Drain to Source Voltage (Vdss)1200 V
Drive Voltage (Max Rds On, Min Rds On)18 V
FET TypeN-Channel
Gate Charge (Max)46 nC
Input Capacitance (Ciss) (Max)1530 pF
Mounting TypeThrough Hole
Operating Temperature175 °C
Package / CaseTO-247-3
Package NameTO-247
Power Dissipation (Max)170 W
Rds On (Max)78 mOhm
TechnologySiCFET (Silicon Carbide)
Vgs (Max) Negative-10 V
Vgs (Max) Positive25 V
Vgs(th) (Max)5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Sign in to see pricing

Create a free account to access distributor pricing data.

CAD

3D models and CAD resources for this part

Documents

Technical documentation and resources

No documents available