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MT53E1G32D2FW-046 AUT:B TR

MT53E1G32D2FW-046 AUT:B TR

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Micron Technology Inc.

IC DRAM 32GBIT PAR 200TFBGA

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MT53E1G32D2FW-046 AUT:B TR

MT53E1G32D2FW-046 AUT:B TR

Active
Micron Technology Inc.

IC DRAM 32GBIT PAR 200TFBGA

Find alt

Description

General part information

MT53E1G32D2FW-046 AUT:B TR

IC DRAM 32GBIT PAR 200TFBGA

Technical Specifications

Parameters and characteristics for this part

SpecificationMT53E1G32D2FW-046 AUT:B TR
Access Time3.5 ns
Clock Frequency2.133 GHz
GradeAutomotive
Memory Depth1 G
Memory FormatDRAM
Memory Interface (Type)Parallel
Memory Size4 GByte
Memory TypeVolatile
Memory Width32 bit
Mounting TypeSurface Mount
Operating Temperature (Max)125 °C
Operating Temperature (Min)-40 °C
Package / Case200-TFBGA
Package Length10 mm
Package Name200-TFBGA
Package Width14.5 mm
QualificationAEC-Q100
TechnologySDRAM - Mobile LPDDR4X
Voltage - Supply (Maximum)1.17 V
Voltage - Supply (Minimum)1.06 V
Write Cycle Time - Page18 ns
Write Cycle Time - Word18 ns

Pricing

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