Description
General part information
IMDQ75R060M2HXTMA1
The CoolSiC™ MOSFET 750 V Generation 2 offers improved switching performance, reduced losses, and enhanced thermal management. With a 25% increase in switching speed and up to 35% improved Figure-of-Merits compared to Generation 1, it enables more efficient, compact, and reliable systems for industrial applications.
Technical Specifications
Parameters and characteristics for this part
| Specification | IMDQ75R060M2HXTMA1 |
|---|---|
| Current - Continuous Drain (Id) (Tc) | 30 A |
| Drain to Source Voltage (Vdss) | 840 V |
| Drive Voltage (Max Rds On) | 15 V |
| Drive Voltage (Min Rds On) | 20 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 20 nC |
| Input Capacitance (Ciss) (Max) | 716 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 175 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | 22-PowerBSOP Module |
| Package Name | PG-HDSOP-22 |
| Power Dissipation (Max) | 128 W |
| Rds On (Max) | 56 mOhm |
| Technology | SiCFET (Silicon Carbide) |
| Vgs (Max) Negative | -7 V |
| Vgs (Max) Positive | 23 V |
| Vgs(th) (Max) | 5.6 V |
Pricing
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