
TRS30N120HB,S1Q
ActiveToshiba Semiconductor and Storage
1200V30A SIC SCHOTTKY BARR DIODE

TRS30N120HB,S1Q
ActiveToshiba Semiconductor and Storage
1200V30A SIC SCHOTTKY BARR DIODE
Description
General part information
TRS30N120HB,S1Q
1200V30A SIC SCHOTTKY BARR DIODE
Technical Specifications
Parameters and characteristics for this part
| Specification | TRS30N120HB,S1Q |
|---|---|
| Current - Average Rectified (Io) (per Diode) | 41 A |
| Current - Reverse Leakage | 100 µA |
| Diode Configuration | Common Cathode |
| Diode Pair Count | 1 pair |
| Mounting Type | Through Hole |
| Operating Temperature - Junction | 175 °C |
| Package / Case | TO-247-3 |
| Package Name | TO-247 |
| Reverse Recovery Time (trr) | 0 ns |
| Speed | No Recovery Time |
| Speed - Fast Recovery (Minimum) | 500 mA |
| Speed - Recovery Current | 500 mA, 500 mA |
| Technology | SiC (Silicon Carbide) Schottky |
| Voltage - DC Reverse (Vr) (Max) | 1200 V |
| Voltage - Forward (Vf) (Max) | 1.45 V, 1.45 V |
Pricing
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