Specification	SIX3K4N10L-TP

Channel Count	2
Configuration	N-Channel
Configuration - Features	Dual
Current - Continuous Drain (Id) (Ta)	200 mA
Drain to Source Voltage (Vdss)	100 V
Gate Charge (Max)	1.8 nC
Input Capacitance (Ciss) (Max)	34 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	SOT-563, SOT-666
Package Name	SOT-563
Power - Max (Tj)	350 mW
Rds On (Max)	3.4 Ohm
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max)	2.5 V

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