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PMDPB56XN,115

PMDPB56XN,115

Obsolete
NXP USA Inc.

MOSFET 2N-CH 30V 3.1A 6HUSON

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PMDPB56XN,115

PMDPB56XN,115

Obsolete
NXP USA Inc.

MOSFET 2N-CH 30V 3.1A 6HUSON

Find alt

Description

General part information

PMDPB56XN,115

MOSFET 2N-CH 30V 3.1A 6HUSON

Technical Specifications

Parameters and characteristics for this part

SpecificationPMDPB56XN,115
Channel Count2
ConfigurationN-Channel
Configuration - FeaturesDual
Current - Continuous Drain (Id)3.1 A
Drain to Source Voltage (Vdss)30 V
FET FeatureLogic Level Gate
Gate Charge (Max)2.9 nC
Input Capacitance (Ciss) (Max)170 pF
Mounting TypeSurface Mount
Operating Temperature (Max)150 °C
Operating Temperature (Min)-55 °C
Package / Case6-UDFN Exposed Pad
Package Length2 mm
Package Name6-HUSON
Package Width2 mm
Power - Max510 mW
Rds On (Max)73 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max)1.5 V

Pricing

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CAD

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Documents

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