3N163 TO-72 4L ROHS

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Linear Integrated Systems, Inc.

P-CHANNEL, SINGLE ENHANCEMENT MO

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Linear Integrated Systems, Inc.

P-CHANNEL, SINGLE ENHANCEMENT MO

Technical Specifications

Parameters and characteristics commom to parts in this series

Specification	3N163 TO-72 4L ROHS	3N163 Series

Current - Continuous Drain (Id) @ 25°C	50 mA	50 mA
Drain to Source Voltage (Vdss)	40 V	40 V
FET Type	P-Channel	P-Channel
Input Capacitance (Ciss) (Max) @ Vds	3.5 pF	3.5 pF
Mounting Type	Through Hole	Through Hole, Surface Mount
Package / Case	TO-206AF, TO-72-4 Metal Can	TO-206AF, TO-72-4 Metal Can, TO-253-4, TO-253AA
Power Dissipation (Max) [Max]	375 mW	350 - 375 mW
Rds On (Max) @ Id, Vgs [Max]	250 Ohm	250 Ohm
Supplier Device Package	TO-72-4	TO-72-4, SOT-143-4
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)
Vgs (Max) [Max]	-6.5 V	-6.5 V
Vgs(th) (Max) @ Id	5 V	5 V

P-CHANNEL, SINGLE ENHANCEMENT MO

Part	Rds On (Max) @ Id, Vgs [Max]	Package / Case	Vgs(th) (Max) @ Id	FET Type	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Mounting Type	Vgs (Max) [Max]	Power Dissipation (Max) [Max]	Input Capacitance (Ciss) (Max) @ Vds	Technology
Linear Integrated Systems, Inc. 3N163 TO-72 4L ROHS	250 Ohm	TO-206AF, TO-72-4 Metal Can	5 V	P-Channel	40 V	50 mA	TO-72-4	Through Hole	-6.5 V	375 mW	3.5 pF	MOSFET (Metal Oxide)
Linear Integrated Systems, Inc. 3N163 SOT-143 4L ROHS	250 Ohm	TO-253-4, TO-253AA	5 V	P-Channel	40 V	50 mA	SOT-143-4	Surface Mount	-6.5 V	350 mW	3.5 pF	MOSFET (Metal Oxide)

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

P-Channel 40 V 50mA 375mW Through Hole TO-72-4

Technical documentation and resources