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Description

General part information

TPH3205WSBQA

GANFET N-CH 650V 35A TO247-3

Technical Specifications

Parameters and characteristics for this part

SpecificationTPH3205WSBQA
Current - Continuous Drain (Id) (Tc)35 A
Drain to Source Voltage (Vdss)650 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Max)42 nC
GradeAutomotive
Input Capacitance (Ciss) (Max)2200 pF
Mounting TypeThrough Hole
Operating Temperature (Max)150 °C
Operating Temperature (Min)-55 °C
Package / CaseTO-247-3
Package NameTO-247-3
Power Dissipation (Max)125 W
QualificationAEC-Q101
Rds On (Max)62 mOhm
TechnologyGaNFET (Gallium Nitride)
Vgs (Max)18 V
Vgs(th) (Max)2.6 V

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