NDS9945
ActiveDUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR 60V, 3.5A, 100MΩ
NDS9945
ActiveDUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR 60V, 3.5A, 100MΩ
Description
General part information
NDS9945
SO-8 N-Channel enhancement mode power field effect transistors are produced using ON Semiconductor's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to provide superior switching performance and minimize on-state resistance. These devices are particularly suited for low voltage applications such as disk drive motor control, battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.
Technical Specifications
Parameters and characteristics for this part
| Specification | NDS9945 |
|---|---|
| Channel Count | 2 |
| Configuration | N-Channel |
| Configuration - Features | Dual |
| Current - Continuous Drain (Id) | 3.5 A |
| Drain to Source Voltage (Vdss) | 60 V |
| FET Feature | Logic Level Gate |
| Gate Charge (Max) | 30 nC |
| Input Capacitance (Ciss) (Max) | 345 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -55 °C |
| Package Length | 0.154 in |
| Package Name | 8-SOIC |
| Package Width | 3.9 mm |
| Power - Max | 900 mW |
| Rds On (Max) | 100 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) | 3 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Sign in to see pricing
Create a free account to access distributor pricing data.
CAD
3D models and CAD resources for this part
Documents
Technical documentation and resources