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BYV410-600PQ

BYV410-600PQ

Active
WeEn Semiconductors

DIODE ARRAY GP 600V 20A TO-220E

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BYV410-600PQ

BYV410-600PQ

Active
WeEn Semiconductors

DIODE ARRAY GP 600V 20A TO-220E

Find alt

Description

General part information

BYV410-600PQ

DIODE ARRAY GP 600V 20A TO-220E

Technical Specifications

Parameters and characteristics for this part

SpecificationBYV410-600PQ
Current - Average Rectified (Io) (per Diode)20 A
Current - Reverse Leakage10 µA
Diode ConfigurationCommon Cathode
Diode Pair Count1 pair
Mounting TypeThrough Hole
Operating Temperature - Junction175 °C
Package / CaseTO-220-3
Package NameTO-220E
Reverse Recovery Time (trr)55 ns
Speed - Fast Recovery (Maximum)500 ns
Speed - Fast Recovery (Minimum)200 mA
TechnologyStandard
Voltage - DC Reverse (Vr) (Max)600 V
Voltage - Forward (Vf) (Max)1.7 V

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