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GT055N06T

GT055N06T

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Goford Semiconductor

MOSFET,N-CH,60V,90A,78W,TO-220

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GT055N06T

GT055N06T

Active
Goford Semiconductor

MOSFET,N-CH,60V,90A,78W,TO-220

Find alt

Description

General part information

GT055N06T

MOSFET,N-CH,60V,90A,78W,TO-220

Technical Specifications

Parameters and characteristics for this part

SpecificationGT055N06T
Current - Continuous Drain (Id) (Tc)90 A
Drain to Source Voltage (Vdss)60 V
Drive Voltage (Max Rds On)4.5 V, 10 V
Drive Voltage (Min Rds On)10 V, 4.5 V
FET TypeN-Channel
Gate Charge (Max)30 nC
Input Capacitance (Ciss) (Max)2160 pF
Mounting TypeThrough Hole, Surface Mount
Operating Temperature (Max)150 °C
Operating Temperature (Min)-55 °C
Package / CaseTO-220-3, SC-63, DPAK (2 Leads + Tab), TO-252-3
Package NameTO-220, TO-252
Power Dissipation (Max)78 W, 78 W
Rds On (Max)5 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max)2.5 V

Pricing

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CAD

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Documents

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