Description
General part information
IMBG120R140M1HXTMA1
The CoolSiC™ 1200 V, 140 mΩSiC MOSFETin a D2PAK-7L (TO-263-7) package build on a state-of-the-art trench semiconductor process optimized to combine performance with reliability in operation. The low power losses of CoolSiC technology, combined with .XT interconnection technology in a new 1200 V optimized SMD package, enables top efficiency and passive cooling potential in applications such as drives, chargers and industrial powers supplies.
Technical Specifications
Parameters and characteristics for this part
| Specification | IMBG120R140M1HXTMA1 |
|---|---|
| Current - Continuous Drain (Id) (Tc) | 18 A |
| Drain to Source Voltage (Vdss) | 1200 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 13.4 nC |
| Input Capacitance (Ciss) (Max) | 491 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 175 °C |
| Operating Temperature (Min) | -55 °C |
| Package Leads | 7 Leads |
| Package Name | D2PAK, PG-TO263-7-12 |
| Power Dissipation (Max) | 107 W |
| Technology | SiCFET (Silicon Carbide) |
| Vgs (Max) Negative | -15 V |
| Vgs (Max) Positive | 18 V |
| Vgs(th) (Max) | 5.7 V |
Pricing
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CAD
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