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BY25FQ16ESTIG(T)

BY25FQ16ESTIG(T)

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BYTe Semiconductor

16 MBIT, 3.0V (2.7V TO 3.6V), -4

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BY25FQ16ESTIG(T)

BY25FQ16ESTIG(T)

Active
BYTe Semiconductor

16 MBIT, 3.0V (2.7V TO 3.6V), -4

Find alt

Description

General part information

BY25FQ16ESTIG(T)

16 MBIT, 3.0V (2.7V TO 3.6V), -4

Technical Specifications

Parameters and characteristics for this part

SpecificationBY25FQ16ESTIG(T)
Access Time5 ns
Clock Frequency133 MHz
Memory Depth2 M
Memory FormatFLASH
Memory Interface (Type)SPI - Quad I/O, QPI, DTR
Memory Size16 Mb
Memory TypeNon-Volatile
Memory Width8 bit
Mounting TypeSurface Mount
Operating Temperature (Max)85 °C
Operating Temperature (Min)-40 °C
Package Length0.154 in
Package Name8-SOIC, 8-SOP
Package Width3.9 mm
TechnologyFLASH - NOR
Voltage - Supply (Maximum)3.6 V
Voltage - Supply (Minimum)2.7 V
Write Cycle Time - Page2.4 ms
Write Cycle Time - Word250 µs

Pricing

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CAD

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Documents

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