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Description

General part information

PJD5NA80_L2_00001

800V N-CHANNEL MOSFET

Technical Specifications

Parameters and characteristics for this part

SpecificationPJD5NA80_L2_00001
Current - Continuous Drain (Id) (Ta)5 A
Drain to Source Voltage (Vdss)800 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Max)17 nC
Input Capacitance (Ciss) (Max)660 pF
Mounting TypeSurface Mount
Operating Temperature (Max)150 °C
Operating Temperature (Min)-55 °C
Package / CaseSC-63, DPAK (2 Leads + Tab), TO-252-3
Package NameTO-252AA
Power Dissipation (Max)140 W
Rds On (Max)2.7 Ohm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)30 V
Vgs(th) (Max)4 V

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