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SI7212DN-T1-E3

SI7212DN-T1-E3

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Vishay Dale

MOSFET 2N-CH 30V 4.9A PPAK 1212

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SI7212DN-T1-E3

SI7212DN-T1-E3

Active
Vishay Dale

MOSFET 2N-CH 30V 4.9A PPAK 1212

Find alt

Description

General part information

SI7212DN-T1-E3

MOSFET 2N-CH 30V 4.9A PPAK 1212

Technical Specifications

Parameters and characteristics for this part

SpecificationSI7212DN-T1-E3
Channel Count2
ConfigurationN-Channel
Configuration - FeaturesDual
Current - Continuous Drain (Id)4.9 A
Drain to Source Voltage (Vdss)30 V
FET FeatureLogic Level Gate
Gate Charge (Max)11 nC
Mounting TypeSurface Mount
Operating Temperature (Max)150 °C
Operating Temperature (Min)-55 °C
Package / CasePowerPAK® 1212-8 Dual
Package NamePowerPAK® 1212-8 Dual
Power - Max1.3 W
Rds On (Max)36 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max)1.6 V

Pricing

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CAD

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Documents

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