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MSRT20060D

MSRT20060D

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GeneSiC Semiconductor

DIODE MODULE GP 600V 200A 3TOWER

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MSRT20060D

MSRT20060D

Active
GeneSiC Semiconductor

DIODE MODULE GP 600V 200A 3TOWER

Find alt

Description

General part information

MSRT20060D

DIODE MODULE GP 600V 200A 3TOWER

Technical Specifications

Parameters and characteristics for this part

SpecificationMSRT20060D
Current - Average Rectified (Io) (per Diode)200 A
Current - Reverse Leakage10 µA
Diode ConfigurationSeries Connection
Diode Pair Count1 pair
Mounting TypeChassis Mount
Operating Temperature - Junction (Max)150 °C
Operating Temperature - Junction (Min)-55 °C
Package / CaseThree Tower
Package NameThree Tower
SpeedStandard Recovery
Speed - Fast Recovery (Minimum)200 mA, 500 ns
Speed - Recovery Current200 mA, 200 mA
Speed - Recovery Time500 ns
TechnologyStandard
Voltage - DC Reverse (Vr) (Max)600 V
Voltage - Forward (Vf) (Max)1.2 V

Pricing

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CAD

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Documents

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