TSM2537CQ
ActiveTaiwan Semiconductor Corporation
MOSFET N/P-CH 20V 11.6A 6TDFN
TSM2537CQ
ActiveTaiwan Semiconductor Corporation
MOSFET N/P-CH 20V 11.6A 6TDFN
Description
General part information
TSM2537CQ
MOSFET N/P-CH 20V 11.6A 6TDFN
Technical Specifications
Parameters and characteristics for this part
| Specification | TSM2537CQ |
|---|---|
| Configuration | N, P-Channel |
| Current - Continuous Drain (Id) (Tc) | 11.6 A |
| Current - Continuous Drain (Id) (Tc) (2) | 9 A |
| Drain to Source Voltage (Vdss) | 20 V |
| FET Feature | Logic Level Gate |
| FET Feature Drive Voltage | 1.8 V |
| Gate Charge (Max) | 9.1 nC |
| Input Capacitance (Ciss) (Max) | 677 pF, 744 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | 6-VDFN Exposed Pad |
| Package Length | 2 mm |
| Package Name | 6-TDFN |
| Package Width | 2 mm |
| Power - Max | 6.25 W |
| Rds On (Max) | 30 mOhm, 55 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) | 1 V |
Pricing
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