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Description

General part information

SI01P02K-TP

P-CHANNEL MOSFET, SOT-23

Technical Specifications

Parameters and characteristics for this part

SpecificationSI01P02K-TP
Current - Continuous Drain (Id) (Ta)700 mA
Drain to Source Voltage (Vdss)20 V
Drive Voltage (Max Rds On)1.8 V
Drive Voltage (Min Rds On)4.5 V
FET TypeP-Channel
Gate Charge (Max)1.24 nC
Input Capacitance (Ciss) (Max)60 pF
Mounting TypeSurface Mount
Operating Temperature (Max)150 °C
Operating Temperature (Min)-55 °C
Package / CaseTO-236-3, SOT-23-3, SC-59
Package NameSOT-23
Power Dissipation (Max)1 W
Rds On (Max)700 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)8 V
Vgs(th) (Max)1 V

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