
GD25MPS17H
ObsoleteGeneSiC Semiconductor
DIODE SIL CARB 1700V 56A TO2472

GD25MPS17H
ObsoleteGeneSiC Semiconductor
DIODE SIL CARB 1700V 56A TO2472
Description
General part information
GD25MPS17H
DIODE SIL CARB 1700V 56A TO2472
Technical Specifications
Parameters and characteristics for this part
| Specification | GD25MPS17H |
|---|---|
| Capacitance | 1083 pF |
| Current - Average Rectified (Io) | 56 A |
| Current - Reverse Leakage | 20 µA |
| Mounting Type | Through Hole |
| Operating Temperature - Junction (Max) | 175 °C |
| Operating Temperature - Junction (Min) | -55 °C |
| Package / Case | TO-247-2 |
| Package Name | TO-247-2 |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Voltage - DC Reverse (Vr) (Max) | 1700 V |
| Voltage - Forward (Vf) (Max) | 1.8 V |
Pricing
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CAD
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Documents
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