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GD25MPS17H

GD25MPS17H

Obsolete
GeneSiC Semiconductor

DIODE SIL CARB 1700V 56A TO2472

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GD25MPS17H

GD25MPS17H

Obsolete
GeneSiC Semiconductor

DIODE SIL CARB 1700V 56A TO2472

Find alt

Description

General part information

GD25MPS17H

DIODE SIL CARB 1700V 56A TO2472

Technical Specifications

Parameters and characteristics for this part

SpecificationGD25MPS17H
Capacitance1083 pF
Current - Average Rectified (Io)56 A
Current - Reverse Leakage20 µA
Mounting TypeThrough Hole
Operating Temperature - Junction (Max)175 °C
Operating Temperature - Junction (Min)-55 °C
Package / CaseTO-247-2
Package NameTO-247-2
Reverse Recovery Time (trr)0 ns
TechnologySiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max)1700 V
Voltage - Forward (Vf) (Max)1.8 V

Pricing

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CAD

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Documents

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