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G25N06K

G25N06K

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Goford Semiconductor

N60V, 25A,RD<27M@10V,VTH1.0V~2.5

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G25N06K

G25N06K

Active
Goford Semiconductor

N60V, 25A,RD<27M@10V,VTH1.0V~2.5

Find alt

Description

General part information

G25N06K

N60V, 25A,RD<27M@10V,VTH1.0V~2.5

Technical Specifications

Parameters and characteristics for this part

SpecificationG25N06K
Current - Continuous Drain (Id) (Tc)25 A, 25 A
Drain to Source Voltage (Vdss)60 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Max)25 nC
Input Capacitance (Ciss) (Max)970 pF
Mounting TypeSurface Mount
Operating Temperature (Max)150 °C
Operating Temperature (Min)-55 °C
Package / CaseSC-63, DPAK (2 Leads + Tab), TO-252-3
Package NameTO-252
Power Dissipation (Max)45 W
Rds On (Max)27 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max)2.5 V

Pricing

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CAD

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Documents

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