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INFINEON 1ED3123MC12HXUMA1

1ED3123MC12HXUMA1

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INFINEON

GATE DRIVER, 1 CHANNELS, ISOLATED, HIGH SIDE, IGBT, MOSFET, SIC MOSFET, 8 PINS, WSOIC

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INFINEON 1ED3123MC12HXUMA1

1ED3123MC12HXUMA1

Active
INFINEON

GATE DRIVER, 1 CHANNELS, ISOLATED, HIGH SIDE, IGBT, MOSFET, SIC MOSFET, 8 PINS, WSOIC

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Description

General part information

1ED3123MC12HXUMA1

EiceDRIVER™ Compactsingle-channelisolated gate driverwith 5.5 A typical sinking and sourcing peak output current in DSO-8 wide-body package with large creepage distance (>8 mm) forIGBTs,MOSFETsandSiC MOSFETs. 1ED3123MC12H belongs to the EiceDRIVER™ Compact 1ED31xx family (X3 Compact family). 1ED3123 offers separate sink and source output, accurate and stable timing, active shutdown to ensure a safe IGBT off-state in case the output chip is not connected to the power, short-circuit clamping to limit the gate voltage during short circuit. The driver can operate over a wide supply voltage range, either unipolar or bipolar.

Technical Specifications

Parameters and characteristics for this part

Specification1ED3123MC12HXUMA1
Approval AgencyVDE, UL
Common Mode Transient Immunity (Min)200 kV/µs
Current - Output High13.5 A
Current - Output Low14 A
Current - Peak Output (Max)14 A
Current - Peak Output (Min)13.5 A
Mounting TypeSurface Mount
Number of Channels1
Operating Temperature (Max)125 °C
Operating Temperature (Min)-40 °C
Package Length0.154 in, 0.295 in
Package Name8-SOIC, PG-DSO-8, PG-DSO-8-66
Package Width3.9 mm, 7.5 mm
Propagation Delay tpHL (Max)100 ns
Propagation Delay tpLH (Max)100 ns
Rise / Fall Time (Max)30 ns
Rise / Fall Time (Typ)30 ns
TechnologyMagnetic Coupling
Voltage - Isolation8 kV
Voltage - Output Supply (Max)35 V
Voltage - Output Supply (Min)10 V

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    1ED3123MC12HXUMA1 | INFINEON | Zenode.ai