BZX884B6V2L-HG3-08
ActiveVishay General Semiconductor - Diodes Division
DIODE ZENER 6.2V 300MW DFN1006
BZX884B6V2L-HG3-08
ActiveVishay General Semiconductor - Diodes Division
DIODE ZENER 6.2V 300MW DFN1006
Description
General part information
BZX884B6V2L-HG3-08
DIODE ZENER 6.2V 300MW DFN1006
Technical Specifications
Parameters and characteristics for this part
| Specification | BZX884B6V2L-HG3-08 |
|---|---|
| Current - Reverse Leakage | 3 µA |
| Grade | Automotive |
| Impedance (Max) (Zzt) | 10 Ohms |
| Mounting Type | Surface Mount |
| Operating Temperature | 150 °C |
| Package / Case | 0402 (1006 Metric) |
| Package Name | DFN1006-2A |
| Power - Max | 300 mW |
| Qualification | AEC-Q101 |
| Tolerance | 2 % |
| Voltage - Forward (Vf) (Max) | 900 mV |
| Voltage - Zener (Nom) (Vz) | 6.2 V |
Pricing
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CAD
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Documents
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