Description
General part information
BSS806NH6327XTSA1
Infineon technologies offers automotive and industrial manufacturers a broad portfolio of N- and P-ChannelSmall Signal MOSFETsthat meet and exceed the highest quality requirements in well-known industry standard packages. With unmatched levels of reliability and manufacturing capacity these components are ideally suited for a wide variety of applications includingLED Lighting, ADAS, body control units,SMPSandmotor control.
Technical Specifications
Parameters and characteristics for this part
| Specification | BSS806NH6327XTSA1 |
|---|---|
| Current - Continuous Drain (Id) (Ta) | 2.3 A |
| Drain to Source Voltage (Vdss) | 20 V |
| Drive Voltage (Max Rds On) | 1.8 V |
| Drive Voltage (Min Rds On) | 2.5 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 1.7 nC |
| Grade | Automotive |
| Input Capacitance (Ciss) (Max) | 529 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | TO-236-3, SOT-23-3, SC-59 |
| Package Name | PG-SOT23 |
| Power Dissipation (Max) | 500 mW |
| Qualification | AEC-Q101 |
| Rds On (Max) | 57 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 8 V |
| Vgs(th) (Max) | 750 mV |
Pricing
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