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WNSC06650T6J

WNSC06650T6J

Obsolete
WeEn Semiconductors

DIODE SIL CARBIDE 650V 6A 5DFN

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WNSC06650T6J

WNSC06650T6J

Obsolete
WeEn Semiconductors

DIODE SIL CARBIDE 650V 6A 5DFN

Find alt

Description

General part information

WNSC06650T6J

DIODE SIL CARBIDE 650V 6A 5DFN

Technical Specifications

Parameters and characteristics for this part

SpecificationWNSC06650T6J
Capacitance190 pF
Current - Average Rectified (Io)6 A
Current - Reverse Leakage40 µA
Mounting TypeSurface Mount
Operating Temperature - Junction (Max)175 °C
Package / Case4-VSFN Exposed Pad
Package Length8 mm
Package Name5-DFN
Package Width8 mm
Reverse Recovery Time (trr)0 ns
SpeedNo Recovery Time
Speed - Fast Recovery (Minimum)500 mA
Speed - Recovery Current500 mA, 500 mA
TechnologySiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max)650 V
Voltage - Forward (Vf) (Max)1.7 V, 1.7 V

Pricing

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