DMN2050L-7

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Diodes Inc

TRANS MOSFET N-CH 20V 5.9A 3-PIN SOT-23 T/R

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Diodes Inc

TRANS MOSFET N-CH 20V 5.9A 3-PIN SOT-23 T/R

Technical Specifications

Parameters and characteristics for this part

Specification	DMN2050L-7

Current - Continuous Drain (Id) @ 25°C	5.9 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	2 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	6.7 nC
Input Capacitance (Ciss) (Max) @ Vds	532 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-23-3, TO-236-3, SC-59
Power Dissipation (Max)	1.4 W
Rds On (Max) @ Id, Vgs	29 mOhm
Supplier Device Package	SOT-23-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	12 V
Vgs(th) (Max) @ Id	1.4 V

Dual N-Channel Enhancement Mode MOSFET

Part	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Technology	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	FET Type	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs [Max]	Mounting Type	Package / Case	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	FET Feature	Power - Max [Max]	Gate Charge (Qg) (Max) @ Vgs	Configuration
Diodes Inc DMN2050L-7	532 pF	20 V	12 V	5.9 A	MOSFET (Metal Oxide)	-55 °C	150 °C	29 mOhm	1.4 V	N-Channel	SOT-23-3	6.7 nC	Surface Mount	SC-59 SOT-23-3 TO-236-3	1.4 W	2 V	4.5 V
Diodes Inc DMN2050LFDB-7	389 pF	20 V		3.3 A	MOSFET (Metal Oxide)	-55 °C	150 °C	45 mOhm	1 V		U-DFN2020-6 (Type B)		Surface Mount	6-UDFN Exposed Pad				Logic Level Gate	730 mW	12 nC	2 N-Channel (Dual)

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

This MOSFET has been designed to minimize the on-state resistance

Technical documentation and resources