STU80N4F6

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STMicroelectronics

MOSFET N-CH 40V 80A TO251

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STMicroelectronics

MOSFET N-CH 40V 80A TO251

Technical Specifications

Parameters and characteristics for this part

Specification	STU80N4F6

Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	36 nC
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	IPAK, TO-251-3 Short Leads, TO-251AA
Power Dissipation (Max)	70 W
Supplier Device Package	TO-251 (IPAK)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

MOSFET N-CH 40V 80A TO251

Part	Vgs(th) (Max) @ Id	Technology	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Vgs (Max)	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs	FET Type
STMicroelectronics STU80N4F6	4 V	MOSFET (Metal Oxide)	-55 °C	175 ░C	IPAK, TO-251-3 Short Leads, TO-251AA	20 V	Through Hole	10 V	TO-251 (IPAK)	40 V	70 W	36 nC	N-Channel

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General part information

N-Channel 40 V 80A (Tc) 70W (Tc) Through Hole TO-251 (IPAK)

Technical documentation and resources