IRF7807ZTRPBF

LTB

Infineon Technologies

IR MOSFET™ N-CHANNEL POWER MOSFET ; SO-8 PACKAGE; 13.8 MOHM;

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LTB

Infineon Technologies

IR MOSFET™ N-CHANNEL POWER MOSFET ; SO-8 PACKAGE; 13.8 MOHM;

Technical Specifications

Parameters and characteristics for this part

Specification	IRF7807ZTRPBF

Current - Continuous Drain (Id) @ 25°C	11 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	11 nC
Input Capacitance (Ciss) (Max) @ Vds	770 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Power Dissipation (Max)	2.5 W
Rds On (Max) @ Id, Vgs	13.8 mOhm
Supplier Device Package	8-SO
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.25 V

Part	Package / Case	Package / Case [y]	Package / Case [x]	FET Type	Technology	Vgs(th) (Max) @ Id	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs	Supplier Device Package
Infineon Technologies IRF7807ZTRPBF	8-SOIC	3.9 mm	0.154 in	N-Channel	MOSFET (Metal Oxide)	2.25 V	20 V	11 A	-55 °C	150 °C	Surface Mount	770 pF	30 V	13.8 mOhm	4.5 V 10 V	2.5 W	11 nC	8-SO

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly