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TO-236AB

PDTC114YT,215

Active
Nexperia USA Inc.

50 V, 100 MA NPN RESISTOR-EQUIPPED TRANSISTOR; R1 = 10 KΩ, R2 = 47 KΩ

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TO-236AB

PDTC114YT,215

Active
Nexperia USA Inc.

50 V, 100 MA NPN RESISTOR-EQUIPPED TRANSISTOR; R1 = 10 KΩ, R2 = 47 KΩ

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Description

General part information

PDTC114 Series

100 mA NPN Resistor-Equipped Transistor (RET) family in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads.

Technical Specifications

Parameters and characteristics for this part

SpecificationPDTC114YT,215
Current - Collector (Ic) (Max)0.1 mA
Current - Collector Cutoff (Max)1 µA
DC Current Gain (hFE) (Min)100
Mounting TypeSurface Mount
Package / CaseTO-236-3, SOT-23-3, SC-59
Package NameTO-236AB
Power - Max250 mW
Resistor - Base (R1) Resistance10 kOhm
Resistor - Emitter Base (R2)47 kOhm
Transistor TypePre-Biased, NPN
Vce Saturation (Max)100 mV
Voltage - Collector Emitter Breakdown (Max)50 V

Pricing

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CAD

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