CDST-19-G

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Comchip Technology

DIODE GP 100V 200MA SOT23-3

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Comchip Technology

DIODE GP 100V 200MA SOT23-3

Technical Specifications

Parameters and characteristics for this part

Specification	CDST-19-G

Capacitance @ Vr, F	5 pF
Current - Average Rectified (Io)	200 mA
Current - Reverse Leakage @ Vr	100 nA
Mounting Type	Surface Mount
Operating Temperature - Junction	150 °C
Package / Case	SOT-23-3, TO-236-3, SC-59
Reverse Recovery Time (trr)	50 ns
Speed	Any Speed
Speed	200 mA
Supplier Device Package	SOT-23-3
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	100 V
Voltage - Forward (Vf) (Max) @ If	1.25 V

DIODE GP 100V 200MA SOT23-3

Part	Reverse Recovery Time (trr)	Operating Temperature - Junction	Package / Case	Technology	Supplier Device Package	Current - Reverse Leakage @ Vr	Voltage - Forward (Vf) (Max) @ If	Speed	Speed	Mounting Type	Current - Average Rectified (Io)	Voltage - DC Reverse (Vr) (Max) [Max]	Capacitance @ Vr, F
Comchip Technology CDST-19-G	50 ns	150 °C	SC-59, SOT-23-3, TO-236-3	Standard	SOT-23-3	100 nA	1.25 V	Any Speed	200 mA	Surface Mount	200 mA	100 V	5 pF

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Diode 100 V 200mA Surface Mount SOT-23-3

Technical documentation and resources

No documents available