SUP65P04-15-E3

Obsolete

Vishay Siliconix

MOSFET P-CH 40V 65A TO220AB

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Obsolete

Vishay Siliconix

MOSFET P-CH 40V 65A TO220AB

Technical Specifications

Parameters and characteristics for this part

Specification	SUP65P04-15-E3

Current - Continuous Drain (Id) @ 25°C	65 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	130 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	5400 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max)	120 W, 3.75 W
Rds On (Max) @ Id, Vgs	15 mOhm
Supplier Device Package	TO-220AB
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3 V

MOSFET P-CH 40V 65A TO220AB

Part	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Vgs(th) (Max) @ Id	Technology	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Package / Case	Gate Charge (Qg) (Max) @ Vgs [Max]	Supplier Device Package	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds [Max]	FET Type
Vishay Siliconix SUP65P04-15-E3	-55 °C	175 ░C	Through Hole	3 V	MOSFET (Metal Oxide)	40 V	15 mOhm	TO-220-3	130 nC	TO-220AB	20 V	65 A	4.5 V, 10 V	3.75 W, 120 W	5400 pF	P-Channel

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

P-Channel 40 V 65A (Tc) 3.75W (Ta), 120W (Tc) Through Hole TO-220AB

Technical documentation and resources