2N6027RLRA
ObsoleteON Semiconductor
PROGRAMMABLE UJT 40V TO92
2N6027RLRA
ObsoleteON Semiconductor
PROGRAMMABLE UJT 40V TO92
Description
General part information
2N6027RLRA
Programmable Unijunction Transistor (UJT) 40V 300 mW TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Technical Specifications
Parameters and characteristics for this part
| Specification | 2N6027RLRA |
|---|---|
| Current - Gate to Anode Leakage (Igao) | 10 nA |
| Current - Peak | 2 µA |
| Current - Valley (Iv) | 50 µA |
| Package / Case | TO-92-3 (TO-226AA) Formed Leads, TO-226-3 |
| Power Dissipation (Max) | 300 mW |
| Voltage | 40 V |
| Voltage - Offset (Vt) | 1.6 V |
| Voltage - Output | 11 V |
Pricing
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