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Description

General part information

TSM052N06PQ56 RLG

MOSFET N-CH 60V 100A 8PDFN

Technical Specifications

Parameters and characteristics for this part

SpecificationTSM052N06PQ56 RLG
Current - Continuous Drain (Id) (Tc)100 A
Drain to Source Voltage (Vdss)60 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Max)50 nC
Input Capacitance (Ciss) (Max)3686 pF
Mounting TypeSurface Mount
Operating Temperature (Max)150 °C
Operating Temperature (Min)-55 °C
Package / Case8-PowerTDFN
Package Length5 mm
Package Name8-PDFN
Package Width6 mm
Power Dissipation (Max)83 W
Rds On (Max)5.2 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)25 V
Vgs(th) (Max)4 V

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