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DMN2451UFB4Q-7R - Package Image for X2-DFN1006-3

DMN2451UFB4Q-7R

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Diodes Inc

TRANS MOSFET N-CH 20V 1.3A AUTOMOTIVE 3-PIN X2-DFN T/R

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DMN2451UFB4Q-7R - Package Image for X2-DFN1006-3

DMN2451UFB4Q-7R

Active
Diodes Inc

TRANS MOSFET N-CH 20V 1.3A AUTOMOTIVE 3-PIN X2-DFN T/R

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationDMN2451UFB4Q-7R
Current - Continuous Drain (Id) @ 25°C1.3 A
Drain to Source Voltage (Vdss)20 V
Drive Voltage (Max Rds On, Min Rds On)4.5 V, 1.8 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs6.4 nC
GradeAutomotive
Input Capacitance (Ciss) (Max) @ Vds32 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case3-XFDFN
Power Dissipation (Max)660 mW
QualificationAEC-Q101
Rds On (Max) @ Id, Vgs400 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)12 V
Vgs(th) (Max) @ Id1 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTape & Reel (TR) 3000$ 0.04
6000$ 0.04
9000$ 0.03
30000$ 0.03
75000$ 0.03
150000$ 0.03

Description

General part information

DMN2451UFB4Q Series

This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications.