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Description

General part information

TSM6N60CP ROG

MOSFET N-CHANNEL 600V 6A TO252

Technical Specifications

Parameters and characteristics for this part

SpecificationTSM6N60CP ROG
Current - Continuous Drain (Id) (Tc)6 A
Drain to Source Voltage (Vdss)600 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Max)20.7 nC
Input Capacitance (Ciss) (Max)1248 pF
Mounting TypeSurface Mount
Operating Temperature150 °C
Package / CaseSC-63, DPAK (2 Leads + Tab), TO-252-3
Package NameTO-252 (DPAK)
Power Dissipation (Max)89 W
Rds On (Max)1.25 Ohm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)30 V
Vgs(th) (Max)4 V

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