Specification	C3M0015065K

Current - Continuous Drain (Id) (Tc)	120 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	15 V
FET Type	N-Channel
Gate Charge (Max)	188 nC, 188 nC
Input Capacitance (Ciss) (Max)	5011 pF
Mounting Type	Through Hole
Operating Temperature (Max)	175 °C
Operating Temperature (Min)	-40 °C
Package / Case	TO-247-4
Package Name	TO-247-4L
Power Dissipation (Max)	416 W
Technology	SiCFET (Silicon Carbide)
Vgs (Max) Negative	-4 V
Vgs (Max) Positive	15 V
Vgs(th) (Max)	3.6 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Create a free account to access distributor pricing data.

CAD

3D models and CAD resources for this part

Technical documentation and resources