Description
General part information
IPD95R450PFD7ATMA1
The 950 V CoolMOS™ PFD7 superjunction MOSFET (IPD95R450PFD7) complements the CoolMOS™ 7 offering for high power lighting and industrialSMPSapplications. The IPD95R450PFD7 comes in a TO-252 DPAK package and features and an on-state resistance (RDS(on)) of 450 mΩ leading to low switching losses. The products come with an integrated fast body diode ensuring a robust device. This product family is tailored to ultrahigh power density as well as the highest efficiency designs. The products primarily address consumer and industrial SMPS applications for PFC and LLC/LCC topologies. The 950 V CoolMOS™ PFD7 offers 60% improved Qgover CoolMOS™ C3 resulting in the reduction of driving losses and improved light and full load efficiency in the applications.
Technical Specifications
Parameters and characteristics for this part
| Specification | IPD95R450PFD7ATMA1 |
|---|---|
| Current - Continuous Drain (Id) (Tc) | 13.3 A |
| Drain to Source Voltage (Vdss) | 950 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 43 nC |
| Input Capacitance (Ciss) (Max) | 1230 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | SC-63, DPAK (2 Leads + Tab), TO-252-3 |
| Package Name | PG-TO252-3 |
| Power Dissipation (Max) | 104 W |
| Rds On (Max) | 450 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) | 3.5 V |
Pricing
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