Specification	CEDM7002AE BK PBFREE

Current - Continuous Drain (Id) (Ta)	300 mA
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On)	2.5 V
Drive Voltage (Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	0.5 nC, 0.5 nC, 500 pC, 500 pC
Input Capacitance (Ciss) (Max)	50 pF, 50 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-65 °C
Package / Case	SC-101, SOT-883
Package Name	SOT-883L
Power Dissipation (Max)	100 mW
Rds On (Max)	1.4 Ohm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	2 V

CMxxDM Series

Part	Package / Case	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max)	Current - Continuous Drain (Id)	Rds On (Max)	Package Name	Mounting Type	Vgs(th) (Max)	Technology	Power - Max	Gate Charge (Max)	Channel Count	Configuration	Configuration - Features	Operating Temperature (Max)	Operating Temperature (Min)
Central Semiconductor Corp CMLDM7003T TR	SOT-563 SOT-666	50 V	50 pF	280 mA	1.5 Ohm	SOT-563	Surface Mount	1.2 V	MOSFET (Metal Oxide)	350 mW	0.76 nC	2	N-Channel	Dual	150 °C	-65 °C
Central Semiconductor Corp CMLDM7003G TR	SOT-563 SOT-666	50 V	50 pF	280 mA	2 Ohm	SOT-563	Surface Mount	1 V	MOSFET (Metal Oxide)	350 mW	0.76 nC	2	N-Channel	Dual	150 °C	-65 °C
Central Semiconductor Corp CMLDM7003 TR	SOT-563 SOT-666	50 V	50 pF	280 mA	2 Ohm	SOT-563	Surface Mount	1 V	MOSFET (Metal Oxide)	350 mW	0.76 nC	2	N-Channel	Dual	150 °C	-65 °C

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