Description
General part information
EPC2108
MOSFET 3N-CH 60V/100V 9BGA
Technical Specifications
Parameters and characteristics for this part
| Specification | EPC2108 |
|---|---|
| Channel Count | 3 |
| Configuration | N-Channel |
| Configuration - Features | Synchronous Bootstrap, Half Bridge |
| Current - Continuous Drain (Id) (Maximum) | 500 mA |
| Current - Continuous Drain (Id) (Typical) | 1.7 A |
| Drain to Source Voltage (Vdss) (Option 1) | 60 V |
| Drain to Source Voltage (Vdss) (Option 2) | 100 V |
| Gate Charge (Max) | 0.044 nC, 0.22 nC, 0.22 nC |
| Input Capacitance (Ciss) (Max) | 7 pF, 22 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -40 °C |
| Package / Case | 9-VFBGA |
| Package Length | 1.35 mm |
| Package Name | 9-BGA |
| Package Width | 1.35 mm |
| Rds On (Max) | 190 mOhm, 3.3 Ohm |
| Technology | GaNFET (Gallium Nitride) |
| Vgs(th) (Max) | 2.5 V, 2.5 V |
Pricing
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CAD
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Documents
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