Specification	RS7G200CHTB1

Current - Continuous Drain (Id) (Ta)	445 A
Current - Continuous Drain (Id) (Tc)	200 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On)	6 V
Drive Voltage (Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	107 nC
Input Capacitance (Ciss) (Max)	8150 pF
Mounting Type	Surface Mount
Operating Temperature	175 °C
Package / Case	8-PowerTDFN
Package Name	DFN5060-8S
Power Dissipation (Max)	3.6 W, 216 W
Rds On (Max)	0.65 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	4 V

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