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Description

General part information

AONS66919

N

Technical Specifications

Parameters and characteristics for this part

SpecificationAONS66919
Current - Continuous Drain (Id) (Ta)23 A
Current - Continuous Drain (Id) (Tc)85 A
Drain to Source Voltage (Vdss)100 V
Drive Voltage (Max Rds On)4.5 V
Drive Voltage (Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Max)66 nC, 66 nC
Input Capacitance (Ciss) (Max)3420 pF
Mounting TypeSurface Mount
Operating Temperature (Max)150 °C
Operating Temperature (Min)-55 °C
Package / CaseFlat Leads, 8-PowerSMD
Package Length5 mm
Package Name8-DFN
Package Width6 mm
Power Dissipation (Max)113 W, 6.2 W
Rds On (Max)5.9 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max)2.6 V

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