SFS1606GH

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Taiwan Semiconductor Corporation

DIODE GEN PURP 400V 16A TO263AB

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Taiwan Semiconductor Corporation

DIODE GEN PURP 400V 16A TO263AB

Technical Specifications

Parameters and characteristics for this part

Specification	SFS1606GH

Capacitance @ Vr, F	60 pF
Current - Average Rectified (Io)	16 A
Current - Reverse Leakage @ Vr	10 µA
Grade	Automotive
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Qualification	AEC-Q101
Reverse Recovery Time (trr)	35 ns
Speed	200 mA, 500 ns
Supplier Device Package	TO-263AB (D2PAK)
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	400 V
Voltage - Forward (Vf) (Max) @ If	1.3 V

Part	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Reverse Recovery Time (trr)	Voltage - DC Reverse (Vr) (Max) [Max]	Capacitance @ Vr, F	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Current - Reverse Leakage @ Vr	Mounting Type	Package / Case	Technology	Speed	Qualification	Supplier Device Package	Grade
Taiwan Semiconductor Corporation SFS1606GH	150 °C	-55 °C	35 ns	400 V	60 pF	16 A	1.3 V	10 µA	Surface Mount	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	Standard	200 mA 500 ns	AEC-Q101	TO-263AB (D2PAK)	Automotive

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 400 V 16A Surface Mount TO-263AB (D2PAK)

Technical documentation and resources