Specification	SI8441DB-T2-E1

Current - Continuous Drain (Id) (Tc)	10.5 A
Drain to Source Voltage (Vdss)	20 V
FET Type	P-Channel
Gate Charge (Max)	13 nC
Input Capacitance (Ciss) (Max)	600 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	6-UFBGA
Package Length	1.5 mm
Package Name	6-Micro Foot™
Package Width	1 mm
Power Dissipation (Max)	2.77 W, 13 W
Rds On (Max)	80 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	5 V
Vgs(th) (Max)	700 mV

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