Description
General part information
ISC030N12NM6ATMA1
This is a normal level 120 V MOSFET inSuperSO8packaging with 3.04 mOhm on-resistance. ISC030N12NM6 is part of Infineon’sOptiMOS™ 6 power MOSFET family.
Technical Specifications
Parameters and characteristics for this part
| Specification | ISC030N12NM6ATMA1 |
|---|---|
| Current - Continuous Drain (Id) (Ta) | 21 A |
| Current - Continuous Drain (Id) (Tc) | 194 A |
| Drain to Source Voltage (Vdss) | 120 V |
| Drive Voltage (Max Rds On) | 8 V |
| Drive Voltage (Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 74 nC |
| Input Capacitance (Ciss) (Max) | 5500 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 175 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | 8-PowerTDFN |
| Package Name | PG-TSON-8-3 |
| Power Dissipation (Max) | 250 W, 3 W |
| Rds On (Max) | 3.04 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) | 3.6 V |
Pricing
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