
HGT1S12N60B3D
ActiveON Semiconductor
IGBT 600V 27A I2PAK

HGT1S12N60B3D
ActiveON Semiconductor
IGBT 600V 27A I2PAK
Description
General part information
HGT1S12N60B3D
IGBT 600V 27A I2PAK
Technical Specifications
Parameters and characteristics for this part
| Specification | HGT1S12N60B3D |
|---|---|
| Current - Collector (Ic) (Max) | 27 A |
| Current - Collector Pulsed (Icm) | 110 A |
| Gate Charge | 78 nC |
| Input Type | Standard |
| Mounting Type | Through Hole |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | TO-262AA, I2PAK, TO-262-3 Long Leads |
| Package Name | I2PAK (TO-262) |
| Power - Max | 104 W |
| Switching Energy (Off) | 250 µJ |
| Switching Energy (On) | 304 µJ |
| Td (off) @ 25°C | 150 ns |
| Td (on) @ 25°C | 26 ns |
| Test Condition Current | 12 A |
| Test Condition Resistance | 25 Ohm |
| Test Condition Voltage | 480 V |
| Test Condition Voltage (Secondary) | 15 V |
| Vce(on) (Max) | 2.1 V |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
Pricing
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